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| TOPLED(R) LS T670, LO T670, LY T670 LG T670, LP T670 Besondere Merkmale q q q q q q q Features q q q q q q q P-LCC-2 package color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering methods available taped on reel (8 mm tape) load dump resistant acc. to DIN 40839 Semiconductor Group 1 11.96 VPL06724 Gehausebauform: P-LCC-2 Gehausefarbe: wei als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Lottechniken geeignet gegurtet (8-mm-Filmgurt) Storimpulsfest nach DIN 40839 LS T670, LO T670, LY T670 LG T670, LP T670 Typ Emissionsfarbe Color of Emission Type Farbe der Lichtaustrittsflache Color of the Light Emitting Area colorless clear Lichtstarke Lichtstrom Bestellnummer Luminous Intensity IF = 10 mA I V (mcd) 2.5 4.0 6.3 10.0 4.0 2.5 4.0 6.3 10.0 4.0 2.5 4.0 6.3 10.0 4.0 2.5 4.0 6.3 10.0 4.0 1.0 1.6 2.5 4.0 1.6 ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... 12.5 8.0 12.5 20.0 32.0 12.5 8.0 12.5 20.0 32.0 12.5 8.0 12.5 20.0 32.0 12.5 8.0 12.5 20.0 32.0 Luminous Flux IF = 10 mA V (mlm) 18 (typ.) 30 (typ.) 45 (typ.) 18 (typ.) 30 (typ.) 45 (typ.) 18 (typ.) 30 (typ.) 45 (typ.) 18 (typ.) 30 (typ.) 45 (typ.) 8 (typ.) 12 (typ.) 18 (typ.) - Ordering Code LS T670-HK LS T670-J LS T670-K LS T670-L LS T670-JM LO T670-HK LO T670-J LO T670-K LO T670-L LO T670-JM LY T670-HK LY T670-J LY T670-K LY T670-L LY T670-JM LG T670-HK LG T670-J LG T670-K LG T670-L LG T670-JM LP T670-FJ LP T670-G LP T670-H LP T670-J LP T670-GK super-red Q62703-Q2309 Q62703-Q2357 Q62703-Q2358 Q62703-Q3848 Q62703-Q3849 Q62703-Q2310 Q62703-Q2475 Q62703-Q2476 Q62703-Q3850 Q62703-Q3851 Q62703-Q2311 Q62703-Q2376 Q62703-Q2375 Q62703-Q3098 Q62703-Q3852 Q62703-Q2312 Q62703-Q2377 Q62703-Q2378 Q62703-Q3146 Q62703-Q3853 Q62703-Q2619 Q62703-Q3102 Q62703-Q2555 Q62703-Q2553 Q62703-Q2456 orange colorless clear yellow colorless clear green colorless clear pure green colorless clear ... 2.0 ... 3.2 ... 5.0 ... 8.0 ... 12.5 Streuung der Lichtstarke in einer Verpackungseinheit I V max / I V min 2.0. Luminous intensity ratio in one packaging unit I V max / I V min 2.0. Semiconductor Group 2 LS T670, LO T670, LY T670 LG T670, LP T670 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspanung Reverse voltage Verlustleistung Power dissipation Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe 16 mm2) mounted on PC board*) (pad size 16 mm2) *) PC-board: FR4 Symbol Symbol Werte Values - 55 ... + 100 - 55 ... + 100 + 100 30 0.5 Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot Rth JA 5 100 400 V mW K/W Semiconductor Group 3 LS T670, LO T670, LY T670 LG T670, LP T670 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlange Dominant wavelength IF = 10 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 10 mA Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % Iv Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tp = 10 s, RL = 50 (typ.) (max.) (typ.) (max.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) Symbol Symbol LS LO 610 Werte Values LY 586 LG 565 LP 557 nm 635 Einheit Unit peak dom 628 605 590 570 560 nm 45 40 45 25 22 nm 2 120 2.0 2.6 120 2.0 2.6 120 2.0 2.6 120 2.0 2.6 120 2.0 2.6 Grad deg. V V VF VF IR IR C0 0.01 0.01 0.01 0.01 0.01 A 10 10 10 10 10 A 12 8 10 15 15 pF (typ.) (typ.) tr tf 300 150 300 150 300 150 450 200 450 200 ns ns Semiconductor Group 4 LS T670, LO T670, LY T670 LG T670, LP T670 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f () Radiation characteristic Semiconductor Group 5 LS T670, LO T670, LY T670 LG T670, LP T670 Durchlastrom IF = f (VF) Forward current TA = 25 C Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) Semiconductor Group 6 LS T670, LO T670, LY T670 LG T670, LP T670 Wellenlange der Strahlung peak = f (TA) Wavelength at peak emission IF = 10 mA Dominantwellenlange dom = f (TA) Dominant wavelength IF = 10 mA Durchlaspannung VF = f (TA) Forward voltage IF = 10 mA Relative Lichtstarke IV / IV(25 C ) = f (TA) Relative luminous intensity IF = 10 mA Semiconductor Group 7 LS T670, LO T670, LY T670 LG T670, LP T670 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Kathodenkennung: abgeschragte Ecke Cathode mark: bevelled edge Semiconductor Group 8 GPL06724 |
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